BAS116QAZ
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
DIODE GP 75V 300MA DFN1010D-3
DIODE GP 75V 300MA DFN1010D-3
Detaljerad specifikation
Detaljerad specifikation
Diode 75 V 300mA ytmonterad DFN1010D-3
Diode 75 V 300mA ytmonterad DFN1010D-3
Beskrivning (eng)
Beskrivning (eng)
The BAS116QAZ is a low-leakage switching diode with a maximum repetitive peak reverse voltage of 85 V and a forward current rating of 300 mA. It features a fast reverse recovery time of 0.8 µs and low leakage current of 3 pA. Encapsulated in a compact DFN1010D-3 package, it is suitable for high-density applications and Automatic Optical Inspection (AOI).
The BAS116QAZ is a low-leakage switching diode with a maximum repetitive peak reverse voltage of 85 V and a forward current rating of 300 mA. It features a fast reverse recovery time of 0.8 µs and low leakage current of 3 pA. Encapsulated in a compact DFN1010D-3 package, it is suitable for high-density applications and Automatic Optical Inspection (AOI).
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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