BAP70-05,215
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
RF DIODE PIN 50V 250MW TO236AB
RF DIODE PIN 50V 250MW TO236AB
Detaljerad specifikation
Detaljerad specifikation
RF Diode PIN - 1 Par Gemensam Katod 50V 100 mA 250 mW SOT-23 (TO-236AB)
RF Diode PIN - 1 Par Gemensam Katod 50V 100 mA 250 mW SOT-23 (TO-236AB)
Beskrivning (eng)
Beskrivning (eng)
The BAP70-05 is a silicon PIN diode configured in a common cathode arrangement, housed in a SOT-23 (TO-236AB) surface-mounted package. It supports a reverse voltage of 50V, forward current of 100mA, and total power dissipation of 250mW. This device features low capacitance and series inductance, making it suitable for RF applications.
The BAP70-05 is a silicon PIN diode configured in a common cathode arrangement, housed in a SOT-23 (TO-236AB) surface-mounted package. It supports a reverse voltage of 50V, forward current of 100mA, and total power dissipation of 250mW. This device features low capacitance and series inductance, making it suitable for RF applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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