AFT05MS006NT1
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
RF MOSFET LDMOS 7.5V PLD-1.5W
RF MOSFET LDMOS 7.5V PLD-1.5W
Detaljerad specifikation
Detaljerad specifikation
RF Mosfet 7.5 V 100 mA 520MHz 18.3dB 6W PLD-1.5W
RF Mosfet 7.5 V 100 mA 520MHz 18.3dB 6W PLD-1.5W
Beskrivning (eng)
Beskrivning (eng)
The AFT05MS006NT1 is a high ruggedness RF power LDMOS transistor designed for handheld two-way radio applications. It operates at 7.5 V with a maximum output power of 6 W across a frequency range of 136 to 941 MHz. This N-channel enhancement-mode device features high gain, exceptional thermal performance, and integrated ESD protection, making it suitable for large-signal amplifier applications.
The AFT05MS006NT1 is a high ruggedness RF power LDMOS transistor designed for handheld two-way radio applications. It operates at 7.5 V with a maximum output power of 6 W across a frequency range of 136 to 941 MHz. This N-channel enhancement-mode device features high gain, exceptional thermal performance, and integrated ESD protection, making it suitable for large-signal amplifier applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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