AFM906NT1
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
RF MOSFET LDMOS 10.8V 16DFN
RF MOSFET LDMOS 10.8V 16DFN
Detaljerad specifikation
Detaljerad specifikation
RF Mosfet 10.8 V 100 mA 136MHz ~ 941MHz 6.8W 16-DFN (4x6 mm (0.16x0.24 in))
RF Mosfet 10.8 V 100 mA 136MHz ~ 941MHz 6.8W 16-DFN (4x6 mm (0.16x0.24 in))
Beskrivning (eng)
Beskrivning (eng)
The AFM906NT1 is a high ruggedness RF MOSFET LDMOS designed for handheld two-way radio applications, operating at frequencies from 136 to 941 MHz. It features a maximum drain-source voltage of 30 Vdc, a gate-source voltage range of -6.0 to +12 Vdc, and delivers up to 6.8 W output power with high efficiency. The device is characterized by exceptional thermal performance and integrated ESD protection, making it suitable for demanding RF applications.
The AFM906NT1 is a high ruggedness RF MOSFET LDMOS designed for handheld two-way radio applications, operating at frequencies from 136 to 941 MHz. It features a maximum drain-source voltage of 30 Vdc, a gate-source voltage range of -6.0 to +12 Vdc, and delivers up to 6.8 W output power with high efficiency. The device is characterized by exceptional thermal performance and integrated ESD protection, making it suitable for demanding RF applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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