AFGB40T65SQDN
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
650V/40A FS4 IGBT TO263 A
650V/40A FS4 IGBT TO263 A
Detaljerad specifikation
Detaljerad specifikation
IGBT 650 V 80 A 238 W Ytmonterad TO-263 (D2PAK)
IGBT 650 V 80 A 238 W Ytmonterad TO-263 (D2PAK)
Beskrivning (eng)
Beskrivning (eng)
The AFGB40T65SQDN is a 650V, 40A IGBT in a TO-263 (D2PAK) package, designed for high-speed switching applications. It features a maximum power dissipation of 238W and a collector-emitter saturation voltage (VCE(sat)) of 1.6V at 40A. This device is AEC-Q101 qualified and suitable for automotive applications.
The AFGB40T65SQDN is a 650V, 40A IGBT in a TO-263 (D2PAK) package, designed for high-speed switching applications. It features a maximum power dissipation of 238W and a collector-emitter saturation voltage (VCE(sat)) of 1.6V at 40A. This device is AEC-Q101 qualified and suitable for automotive applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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