A3T18H455W23SR6
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
RF MOSFET LDMOS 30V ACP1230S-4
RF MOSFET LDMOS 30V ACP1230S-4
Detaljerad specifikation
Detaljerad specifikation
RF Mosfet 30 V 600 mA 1.805GHz ~ 1.88GHz 16.7dB 192W ACP-1230S-4L2S
RF Mosfet 30 V 600 mA 1.805GHz ~ 1.88GHz 16.7dB 192W ACP-1230S-4L2S
Beskrivning (eng)
Beskrivning (eng)
The A3T18H455W23SR6 is an RF power LDMOS transistor designed for cellular base station applications. It operates at 30V with a maximum output power of 87W, covering a frequency range of 1805 to 1880 MHz. This N-channel enhancement-mode LDMOS transistor features high efficiency and is suitable for digital predistortion systems, with a typical power gain of 16.7 dB and drain efficiency of 54.1%. It is optimized for wide instantaneous bandwidth applications.
The A3T18H455W23SR6 is an RF power LDMOS transistor designed for cellular base station applications. It operates at 30V with a maximum output power of 87W, covering a frequency range of 1805 to 1880 MHz. This N-channel enhancement-mode LDMOS transistor features high efficiency and is suitable for digital predistortion systems, with a typical power gain of 16.7 dB and drain efficiency of 54.1%. It is optimized for wide instantaneous bandwidth applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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