A3T18H400W23SR6
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
RF MOSFET LDMOS 28V ACP1230S-4
RF MOSFET LDMOS 28V ACP1230S-4
Detaljerad specifikation
Detaljerad specifikation
RF Mosfet 28 V 300 mA 1.805GHz ~ 1.88GHz 16.8dB 170W ACP-1230S-4L2S
RF Mosfet 28 V 300 mA 1.805GHz ~ 1.88GHz 16.8dB 170W ACP-1230S-4L2S
Beskrivning (eng)
Beskrivning (eng)
The A3T18H400W23SR6 is a high-performance RF power LDMOS transistor designed for cellular base station applications. It operates at 28V with a typical output power of 71W and covers a frequency range of 1805 to 1880 MHz. This N-channel enhancement-mode LDMOS transistor features advanced Doherty performance, high efficiency, and robust operation under high VSWR conditions.
The A3T18H400W23SR6 is a high-performance RF power LDMOS transistor designed for cellular base station applications. It operates at 28V with a typical output power of 71W and covers a frequency range of 1805 to 1880 MHz. This N-channel enhancement-mode LDMOS transistor features advanced Doherty performance, high efficiency, and robust operation under high VSWR conditions.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Marcus eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K