A3T18H360W23SR6
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
RF MOSFET LDMOS 28V ACP1230S-4
RF MOSFET LDMOS 28V ACP1230S-4
Detaljerad specifikation
Detaljerad specifikation
RF Mosfet 28 V 700 mA 1.8GHz ~ 1.88GHz 16.6dB 63W ACP-1230S-4L2S
RF Mosfet 28 V 700 mA 1.8GHz ~ 1.88GHz 16.6dB 63W ACP-1230S-4L2S
Beskrivning (eng)
Beskrivning (eng)
The A3T18H360W23SR6 is a 63 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications. It operates at 28 V with a frequency range of 1805 to 1880 MHz, delivering a power gain of 16.6 dB and a drain efficiency of 51.6%. This device is optimized for wide instantaneous bandwidth and can withstand high output VSWR conditions.
The A3T18H360W23SR6 is a 63 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications. It operates at 28 V with a frequency range of 1805 to 1880 MHz, delivering a power gain of 16.6 dB and a drain efficiency of 51.6%. This device is optimized for wide instantaneous bandwidth and can withstand high output VSWR conditions.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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