A3I25D080NR1
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
RF MOSFET LDMOS 28V TO270-17
RF MOSFET LDMOS 28V TO270-17
Detaljerad specifikation
Detaljerad specifikation
RF Mosfet 28 V 175 mA 2.3GHz ~ 2.69GHz 29.2dB 8.3W TO-270WB-17
RF Mosfet 28 V 175 mA 2.3GHz ~ 2.69GHz 29.2dB 8.3W TO-270WB-17
Beskrivning (eng)
Beskrivning (eng)
The A3I25D080N is an RF LDMOS power amplifier designed for operation in the 2300 to 2690 MHz frequency range. It operates at 28 V with a quiescent current of 175 mA, delivering an average output power of 8.3 W. The device features integrated Doherty architecture, on-chip matching, and RF decoupled drain pins, making it suitable for cellular base station applications.
The A3I25D080N is an RF LDMOS power amplifier designed for operation in the 2300 to 2690 MHz frequency range. It operates at 28 V with a quiescent current of 175 mA, delivering an average output power of 8.3 W. The device features integrated Doherty architecture, on-chip matching, and RF decoupled drain pins, making it suitable for cellular base station applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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