A3I20X050NR1
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
AIRFAST RF LDMOS WIDEBAND INTEGR
AIRFAST RF LDMOS WIDEBAND INTEGR
Detaljerad specifikation
Detaljerad specifikation
RF förstärkar IC 1.8GHz ~ 2.2GHz OM-400-8
RF förstärkar IC 1.8GHz ~ 2.2GHz OM-400-8
Beskrivning (eng)
Beskrivning (eng)
The A3I20X050N is an RF Amplifier IC designed for wideband applications from 1.8 GHz to 2.2 GHz. It features an integrated Doherty circuit with on-chip matching, enabling operation at 20 to 32 V. The device delivers an average output power of 6.3 W and supports various cellular base station modulation formats, making it suitable for modern communication systems.
The A3I20X050N is an RF Amplifier IC designed for wideband applications from 1.8 GHz to 2.2 GHz. It features an integrated Doherty circuit with on-chip matching, enabling operation at 20 to 32 V. The device delivers an average output power of 6.3 W and supports various cellular base station modulation formats, making it suitable for modern communication systems.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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