A3G26H502W17SR3
Tillverkare
NXP
Specifikation
Specifikation
RF MOSFET GAN 48V NI780
RF MOSFET GAN 48V NI780
Detaljerad specifikation
Detaljerad specifikation
RF Mosfet 48 V 370 mA 2.496GHz ~ 2.69GHz 13.1dB 80W NI-780-4S2S
RF Mosfet 48 V 370 mA 2.496GHz ~ 2.69GHz 13.1dB 80W NI-780-4S2S
Beskrivning (eng)
Beskrivning (eng)
The A3G26H502W17SR3 is a high-performance RF MOSFET from NXP USA Inc., designed for applications requiring efficient power amplification. This GaN (Gallium Nitride) device operates at a voltage of 48V and can handle a current of 370 mA. It is optimized for frequency ranges between 2.496GHz and 2.69GHz, providing a gain of 13.1dB and a power output capability of 80W. The NI-780-4S2S package ensures reliable thermal management and performance in demanding RF applications, making it suitable for advanced communication systems.
The A3G26H502W17SR3 is a high-performance RF MOSFET from NXP USA Inc., designed for applications requiring efficient power amplification. This GaN (Gallium Nitride) device operates at a voltage of 48V and can handle a current of 370 mA. It is optimized for frequency ranges between 2.496GHz and 2.69GHz, providing a gain of 13.1dB and a power output capability of 80W. The NI-780-4S2S package ensures reliable thermal management and performance in demanding RF applications, making it suitable for advanced communication systems.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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