A3G23H500W17SR3
Tillverkare
NXP
Specifikation
Specifikation
RF MOSFET GAN 48V NI780
RF MOSFET GAN 48V NI780
Detaljerad specifikation
Detaljerad specifikation
RF Mosfet 48 V 300 mA 2.3GHz ~ 2.4GHz 14.3dB 80W NI-780-4S2S
RF Mosfet 48 V 300 mA 2.3GHz ~ 2.4GHz 14.3dB 80W NI-780-4S2S
Beskrivning (eng)
Beskrivning (eng)
The A3G23H500W17SR3 from NXP USA Inc. is a high-performance RF MOSFET designed for applications requiring efficient power amplification. This device operates at a voltage of 48V and can handle a current of 300 mA, making it suitable for RF applications in the 2.3GHz to 2.4GHz frequency range. With a gain of 14.3dB and a power output capability of 80W, it is ideal for use in communication systems, RF transmitters, and other high-frequency applications where reliability and performance are critical.
The A3G23H500W17SR3 from NXP USA Inc. is a high-performance RF MOSFET designed for applications requiring efficient power amplification. This device operates at a voltage of 48V and can handle a current of 300 mA, making it suitable for RF applications in the 2.3GHz to 2.4GHz frequency range. With a gain of 14.3dB and a power output capability of 80W, it is ideal for use in communication systems, RF transmitters, and other high-frequency applications where reliability and performance are critical.
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Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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