A3G20S350-01SR3
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
RF MOSFET N-CHANNEL 48V NI400
RF MOSFET N-CHANNEL 48V NI400
Detaljerad specifikation
Detaljerad specifikation
RF Mosfet 48 V 500 mA 2.11GHz ~ 2.17GHz 18.1dB 59W NI-400S-2SA
RF Mosfet 48 V 500 mA 2.11GHz ~ 2.17GHz 18.1dB 59W NI-400S-2SA
Beskrivning (eng)
Beskrivning (eng)
The A3G20S350-01SR3 is a 59 W RF power GaN transistor designed for cellular base station applications, operating in the frequency range of 2110 to 2170 MHz. It features high terminal impedances for optimal broadband performance and is optimized for Doherty applications, with a typical output power of 59 W at 48 V and 500 mA.
The A3G20S350-01SR3 is a 59 W RF power GaN transistor designed for cellular base station applications, operating in the frequency range of 2110 to 2170 MHz. It features high terminal impedances for optimal broadband performance and is optimized for Doherty applications, with a typical output power of 59 W at 48 V and 500 mA.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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