A3G18D510-04SR3
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
RF MOSFET GAN 48V NI780
RF MOSFET GAN 48V NI780
Detaljerad specifikation
Detaljerad specifikation
RF Mosfet 48 V 250 mA 1.805GHz ~ 2.2GHz 16dB 56W NI-780S-4L
RF Mosfet 48 V 250 mA 1.805GHz ~ 2.2GHz 16dB 56W NI-780S-4L
Beskrivning (eng)
Beskrivning (eng)
The A3G18D510-04SR3 is a 56 W symmetrical Doherty RF power GaN transistor designed for cellular base station applications. It operates within a frequency range of 1805 to 2200 MHz, providing high efficiency and linearity. With a maximum drain-source voltage of 125 Vdc and a gate-source voltage of -8 Vdc, it supports advanced broadband performance and can withstand high output VSWR conditions.
The A3G18D510-04SR3 is a 56 W symmetrical Doherty RF power GaN transistor designed for cellular base station applications. It operates within a frequency range of 1805 to 2200 MHz, providing high efficiency and linearity. With a maximum drain-source voltage of 125 Vdc and a gate-source voltage of -8 Vdc, it supports advanced broadband performance and can withstand high output VSWR conditions.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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