A2V09H300-04NR3
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
RF MOSFET LDMOS 48V OM780G-4
RF MOSFET LDMOS 48V OM780G-4
Detaljerad specifikation
Detaljerad specifikation
RF Mosfet 48 V 400 mA 720MHz ~ 960MHz 19.7dB 53dBm OM-780G-4L
RF Mosfet 48 V 400 mA 720MHz ~ 960MHz 19.7dB 53dBm OM-780G-4L
Beskrivning (eng)
Beskrivning (eng)
The A2V09H300-04NR3 is a 79 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications. It operates at 48 V with a frequency range of 720 to 960 MHz, delivering a typical power gain of 19.7 dB and efficiency of 55.9% at 940 MHz. This N-channel enhancement-mode lateral MOSFET is optimized for digital predistortion error correction systems.
The A2V09H300-04NR3 is a 79 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications. It operates at 48 V with a frequency range of 720 to 960 MHz, delivering a typical power gain of 19.7 dB and efficiency of 55.9% at 940 MHz. This N-channel enhancement-mode lateral MOSFET is optimized for digital predistortion error correction systems.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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