A2V07H525-04NR6
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
RF MOSFET LDMOS 48V OM1230-4
RF MOSFET LDMOS 48V OM1230-4
Detaljerad specifikation
Detaljerad specifikation
RF Mosfet 48 V 700 mA 595MHz ~ 851MHz 17.5dB 120W OM-1230-4L
RF Mosfet 48 V 700 mA 595MHz ~ 851MHz 17.5dB 120W OM-1230-4L
Beskrivning (eng)
Beskrivning (eng)
The A2V07H525-04NR6 is a high-performance RF power LDMOS transistor designed for cellular base station applications. It operates at 48V with a maximum output power of 120W, covering a frequency range of 595 to 851 MHz. This N-channel enhancement-mode LDMOS transistor features advanced Doherty performance, making it suitable for W-CDMA applications with high efficiency and linearity.
The A2V07H525-04NR6 is a high-performance RF power LDMOS transistor designed for cellular base station applications. It operates at 48V with a maximum output power of 120W, covering a frequency range of 595 to 851 MHz. This N-channel enhancement-mode LDMOS transistor features advanced Doherty performance, making it suitable for W-CDMA applications with high efficiency and linearity.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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