A2T23H160-24SR3
Tillverkare
NXP
Specifikation
Specifikation
RF MOSFET LDMOS 28V NI780
RF MOSFET LDMOS 28V NI780
Detaljerad specifikation
Detaljerad specifikation
RF Mosfet 28 V 350 mA 2.3GHz 17.7dB 28W NI-780S-4L2L
RF Mosfet 28 V 350 mA 2.3GHz 17.7dB 28W NI-780S-4L2L
Beskrivning (eng)
Beskrivning (eng)
The A2T23H160-24SR3 is an RF MOSFET LDMOS designed for high-performance applications. Operating at a voltage of 28V and a current of 350 mA, this device is optimized for frequencies up to 2.3GHz, providing a gain of 17.7dB and a power output of 28W. The NI-780S-4L2L package ensures efficient thermal management and compact integration into RF systems. This MOSFET is ideal for use in RF amplification, telecommunications, and other high-frequency applications where reliability and performance are critical.
The A2T23H160-24SR3 is an RF MOSFET LDMOS designed for high-performance applications. Operating at a voltage of 28V and a current of 350 mA, this device is optimized for frequencies up to 2.3GHz, providing a gain of 17.7dB and a power output of 28W. The NI-780S-4L2L package ensures efficient thermal management and compact integration into RF systems. This MOSFET is ideal for use in RF amplification, telecommunications, and other high-frequency applications where reliability and performance are critical.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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