A2T18H100-25SR3
Tillverkare
NXP
Specifikation
Specifikation
RF MOSFET LDMOS 28V NI780
RF MOSFET LDMOS 28V NI780
Detaljerad specifikation
Detaljerad specifikation
RF Mosfet 28 V 230 mA 1.81GHz 18.1dB 18W NI-780-4S4
RF Mosfet 28 V 230 mA 1.81GHz 18.1dB 18W NI-780-4S4
Beskrivning (eng)
Beskrivning (eng)
The A2T18H100-25SR3 is an RF MOSFET LDMOS designed for high-performance applications. Operating at a voltage of 28V, it delivers a maximum current of 230 mA and operates efficiently at a frequency of 1.81 GHz. With a power output capability of 18W and a gain of 18.1 dB, this device is ideal for RF amplification in various communication systems. The NI-780-4S4 package ensures reliable thermal performance and ease of integration into compact designs, making it suitable for modern RF applications.
The A2T18H100-25SR3 is an RF MOSFET LDMOS designed for high-performance applications. Operating at a voltage of 28V, it delivers a maximum current of 230 mA and operates efficiently at a frequency of 1.81 GHz. With a power output capability of 18W and a gain of 18.1 dB, this device is ideal for RF amplification in various communication systems. The NI-780-4S4 package ensures reliable thermal performance and ease of integration into compact designs, making it suitable for modern RF applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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