A2G26H281-04SR3
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
RF MOSFET GAN 48V NI780
RF MOSFET GAN 48V NI780
Detaljerad specifikation
Detaljerad specifikation
RF Mosfet 48 V 150 mA 2.496GHz ~ 2.69GHz 14.2dB 50W NI-780S-4L
RF Mosfet 48 V 150 mA 2.496GHz ~ 2.69GHz 14.2dB 50W NI-780S-4L
Beskrivning (eng)
Beskrivning (eng)
The A2G26H281-04SR3 is a 50 W asymmetrical Doherty RF power GaN transistor designed for cellular base station applications. It operates within a frequency range of 2496 to 2690 MHz, providing high efficiency and performance with a typical power gain of 14.2 dB and drain efficiency of 58.7%. This device is optimized for broadband performance and can withstand high output VSWR conditions.
The A2G26H281-04SR3 is a 50 W asymmetrical Doherty RF power GaN transistor designed for cellular base station applications. It operates within a frequency range of 2496 to 2690 MHz, providing high efficiency and performance with a typical power gain of 14.2 dB and drain efficiency of 58.7%. This device is optimized for broadband performance and can withstand high output VSWR conditions.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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