A2G22S251-01SR3
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
RF MOSFET GAN 48V NI400
RF MOSFET GAN 48V NI400
Detaljerad specifikation
Detaljerad specifikation
RF Mosfet 48 V 200 mA 1.805GHz ~ 2.2GHz 17.7dB 52dBm NI-400S-2S
RF Mosfet 48 V 200 mA 1.805GHz ~ 2.2GHz 17.7dB 52dBm NI-400S-2S
Beskrivning (eng)
Beskrivning (eng)
The A2G22S251-01SR3 is a 48 W RF power GaN transistor designed for cellular base station applications, operating in the frequency range of 1805 to 2200 MHz. It features high terminal impedances for optimal broadband performance and is optimized for Doherty applications, ensuring reliable performance in demanding environments.
The A2G22S251-01SR3 is a 48 W RF power GaN transistor designed for cellular base station applications, operating in the frequency range of 1805 to 2200 MHz. It features high terminal impedances for optimal broadband performance and is optimized for Doherty applications, ensuring reliable performance in demanding environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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