70T633S10BCI
Tillverkare
RENESAS
Datablad
Datablad
Specifikation
Specifikation
IC SRAM 9MBIT PARALLEL 256CABGA
IC SRAM 9MBIT PARALLEL 256CABGA
Detaljerad specifikation
Detaljerad specifikation
SRAM - Dual Port, Asynkron Minne IC 9Mbit Parallell 10 ns 256-CABGA (17x17 mm)
SRAM - Dual Port, Asynkron Minne IC 9Mbit Parallell 10 ns 256-CABGA (17x17 mm)
Beskrivning (eng)
Beskrivning (eng)
The IDT70T633/1S is a high-speed 2.5V 512/256K x 18 asynchronous dual-port static RAM, featuring a 10 ns access time and a 256-ball CABGA package. It supports simultaneous access from both ports, with independent control, address, and I/O pins. The device includes a RapidWrite mode for efficient back-to-back write operations and an automatic power-down feature. It operates with a single 2.5V power supply for core and selectable 3.3V or 2.5V for I/O, making it suitable for high-performance applications.
The IDT70T633/1S is a high-speed 2.5V 512/256K x 18 asynchronous dual-port static RAM, featuring a 10 ns access time and a 256-ball CABGA package. It supports simultaneous access from both ports, with independent control, address, and I/O pins. The device includes a RapidWrite mode for efficient back-to-back write operations and an automatic power-down feature. It operates with a single 2.5V power supply for core and selectable 3.3V or 2.5V for I/O, making it suitable for high-performance applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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