70T633S10BCGI
Tillverkare
RENESAS
Datablad
Datablad
Specifikation
Specifikation
IC SRAM 9MBIT PARALLEL 256CABGA
IC SRAM 9MBIT PARALLEL 256CABGA
Detaljerad specifikation
Detaljerad specifikation
SRAM - Dual Port, Asynkron Minne IC 9Mbit Parallell 10 ns 256-CABGA (17x17 mm) (0.67x0.67 in)
SRAM - Dual Port, Asynkron Minne IC 9Mbit Parallell 10 ns 256-CABGA (17x17 mm) (0.67x0.67 in)
Beskrivning (eng)
Beskrivning (eng)
The IDT70T633/1S is a high-speed 512/256K x 18 asynchronous dual-port static RAM designed for independent access from both ports. It operates at a core voltage of 2.5V and supports LVTTL-compatible I/O voltages of 3.3V or 2.5V. With a maximum access time of 10 ns, it features true dual-port memory cells, semaphore signaling, and a RapidWrite mode for efficient data handling. The device is available in a 256-ball BGA package and is suitable for industrial applications with a temperature range of -40°C to +85°C.
The IDT70T633/1S is a high-speed 512/256K x 18 asynchronous dual-port static RAM designed for independent access from both ports. It operates at a core voltage of 2.5V and supports LVTTL-compatible I/O voltages of 3.3V or 2.5V. With a maximum access time of 10 ns, it features true dual-port memory cells, semaphore signaling, and a RapidWrite mode for efficient data handling. The device is available in a 256-ball BGA package and is suitable for industrial applications with a temperature range of -40°C to +85°C.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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