70T3589S133BFI
Tillverkare
RENESAS
Datablad
Datablad
Specifikation
Specifikation
IC SRAM 2MBIT PARALLEL 208CABGA
IC SRAM 2MBIT PARALLEL 208CABGA
Detaljerad specifikation
Detaljerad specifikation
SRAM - Dual Port, Synchronous Memory IC 2Mbit Parallell 133 MHz 4.2 ns 208-CABGA (15x15 mm (0.59x0.59 in))
SRAM - Dual Port, Synchronous Memory IC 2Mbit Parallell 133 MHz 4.2 ns 208-CABGA (15x15 mm (0.59x0.59 in))
Beskrivning (eng)
Beskrivning (eng)
The Renesas Electronics Corporation IDT70T3589S133BFI is a high-speed 2Mbit dual-port synchronous static RAM (SRAM) designed for industrial applications. It operates at 133 MHz with a maximum access time of 4.2 ns. The device features a 208-pin fine pitch Ball Grid Array (fpBGA) package and supports both 3.3V and 2.5V I/O levels. It includes advanced features such as interrupt and collision detection flags, separate byte controls, and dual cycle deselect for pipelined output mode, making it suitable for high-performance memory applications.
The Renesas Electronics Corporation IDT70T3589S133BFI is a high-speed 2Mbit dual-port synchronous static RAM (SRAM) designed for industrial applications. It operates at 133 MHz with a maximum access time of 4.2 ns. The device features a 208-pin fine pitch Ball Grid Array (fpBGA) package and supports both 3.3V and 2.5V I/O levels. It includes advanced features such as interrupt and collision detection flags, separate byte controls, and dual cycle deselect for pipelined output mode, making it suitable for high-performance memory applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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