70T3519S200BCG
Tillverkare
RENESAS
Datablad
Datablad
Specifikation
Specifikation
IC SRAM 9MBIT PARALLEL 256CABGA
IC SRAM 9MBIT PARALLEL 256CABGA
Detaljerad specifikation
Detaljerad specifikation
SRAM - Dubbelport, synkron minnes-IC 9Mbit parallell 200 MHz 3.4 ns 256-CABGA (17x17 mm (0.67x0.67 in))
SRAM - Dubbelport, synkron minnes-IC 9Mbit parallell 200 MHz 3.4 ns 256-CABGA (17x17 mm (0.67x0.67 in))
Beskrivning (eng)
Beskrivning (eng)
The IDT70T3519S200BCG is a high-speed 9Mbit dual-port synchronous static RAM, featuring a 256K x 36 bit architecture. It operates at 200 MHz with a maximum access time of 3.4 ns. The device supports both 3.3V and 2.5V I/O levels, with a core supply voltage of 2.5V. It includes features such as interrupt and collision detection flags, separate byte controls, and dual cycle deselect for pipelined output mode. The device is housed in a 256-pin CABGA package, suitable for industrial applications.
The IDT70T3519S200BCG is a high-speed 9Mbit dual-port synchronous static RAM, featuring a 256K x 36 bit architecture. It operates at 200 MHz with a maximum access time of 3.4 ns. The device supports both 3.3V and 2.5V I/O levels, with a core supply voltage of 2.5V. It includes features such as interrupt and collision detection flags, separate byte controls, and dual cycle deselect for pipelined output mode. The device is housed in a 256-pin CABGA package, suitable for industrial applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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