6116LA120TDB
Tillverkare
RENESAS
Datablad
Datablad
Specifikation
Specifikation
IC SRAM 16KBIT PARALLEL 24CDIP
IC SRAM 16KBIT PARALLEL 24CDIP
Detaljerad specifikation
Detaljerad specifikation
SRAM - Asynkron minnes-IC 16Kbit parallell 120 ns 24-CDIP
SRAM - Asynkron minnes-IC 16Kbit parallell 120 ns 24-CDIP
Beskrivning (eng)
Beskrivning (eng)
The Renesas Electronics 6116LA120TDB is a 16Kbit asynchronous SRAM memory IC, organized as 2K x 8, with a maximum access time of 120 ns. It operates with a supply voltage of 5.0V ± 10% and features low power consumption, battery backup capability, and TTL-compatible I/O. The device is available in a 24-pin CDIP package, suitable for various applications requiring high-speed static memory.
The Renesas Electronics 6116LA120TDB is a 16Kbit asynchronous SRAM memory IC, organized as 2K x 8, with a maximum access time of 120 ns. It operates with a supply voltage of 5.0V ± 10% and features low power consumption, battery backup capability, and TTL-compatible I/O. The device is available in a 24-pin CDIP package, suitable for various applications requiring high-speed static memory.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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