4N37SR2M
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
OPTOISO 4.17KV TRANS W/BASE 6SMD
OPTOISO 4.17KV TRANS W/BASE 6SMD
Detaljerad specifikation
Detaljerad specifikation
Optoisolator Transistor med Basutgång 4170Vrms 1 Kanal 6-SMD
Optoisolator Transistor med Basutgång 4170Vrms 1 Kanal 6-SMD
Beskrivning (eng)
Beskrivning (eng)
The 4N37SR2M from onsemi is a high-performance optoisolator featuring a gallium arsenide infrared emitting diode driving a silicon phototransistor. It offers a maximum isolation voltage of 4170 Vrms and a current transfer ratio of 100% at IF = 10 mA, VCE = 10 V. This device is housed in a 6-pin surface-mounted package, making it suitable for various applications in power supply regulation and digital logic interfacing.
The 4N37SR2M from onsemi is a high-performance optoisolator featuring a gallium arsenide infrared emitting diode driving a silicon phototransistor. It offers a maximum isolation voltage of 4170 Vrms and a current transfer ratio of 100% at IF = 10 mA, VCE = 10 V. This device is housed in a 6-pin surface-mounted package, making it suitable for various applications in power supply regulation and digital logic interfacing.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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