4N36M
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
OPTOISO 4.17KV TRANS W/BASE 6DIP
OPTOISO 4.17KV TRANS W/BASE 6DIP
Detaljerad specifikation
Detaljerad specifikation
Optoisolator Transistor med Basutgång 4170Vrms 1 Kanal 6-DIP
Optoisolator Transistor med Basutgång 4170Vrms 1 Kanal 6-DIP
Beskrivning (eng)
Beskrivning (eng)
The 4N36M from onsemi is a high-performance optoisolator featuring a gallium arsenide infrared emitting diode and a silicon phototransistor in a 6-pin DIP package. It offers an isolation voltage of 4170 Vrms and a minimum current transfer ratio of 100% at IF = 10 mA, VCE = 10 V, making it suitable for various applications in power supply regulation and digital logic interfacing.
The 4N36M from onsemi is a high-performance optoisolator featuring a gallium arsenide infrared emitting diode and a silicon phototransistor in a 6-pin DIP package. It offers an isolation voltage of 4170 Vrms and a minimum current transfer ratio of 100% at IF = 10 mA, VCE = 10 V, making it suitable for various applications in power supply regulation and digital logic interfacing.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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