4N35M
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
OPTOISO 4.17KV TRANS W/BASE 6DIP
OPTOISO 4.17KV TRANS W/BASE 6DIP
Detaljerad specifikation
Detaljerad specifikation
Optoisolator Transistor med Basutgång 4170Vrms 1 Kanal 6-DIP
Optoisolator Transistor med Basutgång 4170Vrms 1 Kanal 6-DIP
Beskrivning (eng)
Beskrivning (eng)
The 4N35M from onsemi is a general-purpose optoisolator featuring a gallium arsenide infrared emitting diode driving a silicon phototransistor. It offers an isolation voltage of 4170 Vrms and is housed in a 6-pin dual-in-line package (DIP). This device is designed for applications requiring electrical isolation and signal transmission.
The 4N35M from onsemi is a general-purpose optoisolator featuring a gallium arsenide infrared emitting diode driving a silicon phototransistor. It offers an isolation voltage of 4170 Vrms and is housed in a 6-pin dual-in-line package (DIP). This device is designed for applications requiring electrical isolation and signal transmission.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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