4N35-000E
Tillverkare
BROADCOM
Datablad
Datablad
Specifikation
Specifikation
OPTOISO 3.55KV TRANS W/BASE 6DIP
OPTOISO 3.55KV TRANS W/BASE 6DIP
Detaljerad specifikation
Detaljerad specifikation
Optoisolator Transistor med Basutgång 3550Vrms 1 Kanal 6-DIP
Optoisolator Transistor med Basutgång 3550Vrms 1 Kanal 6-DIP
Beskrivning (eng)
Beskrivning (eng)
The 4N35-000E is a high-performance optoisolator featuring a light-emitting diode optically coupled to a phototransistor. It offers an isolation voltage of 3550 Vrms and a minimum current transfer ratio (CTR) of 100% at an input current of 10 mA. The device is housed in a 6-pin DIP package with a typical response time of 3 µs, making it suitable for general-purpose applications in various electronic systems.
The 4N35-000E is a high-performance optoisolator featuring a light-emitting diode optically coupled to a phototransistor. It offers an isolation voltage of 3550 Vrms and a minimum current transfer ratio (CTR) of 100% at an input current of 10 mA. The device is housed in a 6-pin DIP package with a typical response time of 3 µs, making it suitable for general-purpose applications in various electronic systems.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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