30C02MH-TL-E
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 30V 0.7A 3MCPH
TRANS NPN 30V 0.7A 3MCPH
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 30 V 700 mA 540 MHz 600 mW ytmonterad 3-MCPH
Bipolär (BJT) Transistor NPN 30 V 700 mA 540 MHz 600 mW ytmonterad 3-MCPH
Beskrivning (eng)
Beskrivning (eng)
The 30C02MH-TL-E from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for various applications requiring efficient switching and amplification. With a maximum collector-emitter voltage of 30V and a continuous collector current rating of 700mA, this transistor operates effectively at frequencies up to 540MHz. It has a power dissipation capability of 600mW, making it suitable for compact surface-mounted designs. The 3-MCPH package ensures ease of integration into modern electronic circuits, providing reliable performance in demanding environments.
The 30C02MH-TL-E from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for various applications requiring efficient switching and amplification. With a maximum collector-emitter voltage of 30V and a continuous collector current rating of 700mA, this transistor operates effectively at frequencies up to 540MHz. It has a power dissipation capability of 600mW, making it suitable for compact surface-mounted designs. The 3-MCPH package ensures ease of integration into modern electronic circuits, providing reliable performance in demanding environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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