2SK3476(TE12L,Q)
Tillverkare
TOSHIBA
Datablad
Datablad
Detaljerad specifikation
Detaljerad specifikation
Trans RF MOSFET N-CH 20V 3A 3-Pin PW-X T/R
Trans RF MOSFET N-CH 20V 3A 3-Pin PW-X T/R
Beskrivning (eng)
Beskrivning (eng)
The 2SK3476(TE12L,Q) from Toshiba is a high-performance N-channel RF MOSFET designed for applications requiring efficient switching and amplification. With a maximum drain-source voltage of 20V and a continuous drain current rating of 3A, this device is suitable for various RF applications. It features a compact 3-pin PW-X package, ensuring ease of integration into circuit designs. The MOSFET's low on-resistance (RDS(on)) contributes to reduced power loss and improved thermal performance, making it ideal for RF amplification and switching circuits.
The 2SK3476(TE12L,Q) from Toshiba is a high-performance N-channel RF MOSFET designed for applications requiring efficient switching and amplification. With a maximum drain-source voltage of 20V and a continuous drain current rating of 3A, this device is suitable for various RF applications. It features a compact 3-pin PW-X package, ensuring ease of integration into circuit designs. The MOSFET's low on-resistance (RDS(on)) contributes to reduced power loss and improved thermal performance, making it ideal for RF amplification and switching circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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