2SK1835-E
Tillverkare
RENESAS
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 1500V 4A TO3P
MOSFET N-CH 1500V 4A TO3P
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 1500 V 4A (Ta) 125W (Tc) Genomgående hål TO-3P
N-Kanal 1500 V 4A (Ta) 125W (Tc) Genomgående hål TO-3P
Beskrivning (eng)
Beskrivning (eng)
The 2SK1835-E is a high-performance N-Channel MOSFET designed for high-speed power switching applications. It features a breakdown voltage of 1500 V, a continuous drain current of 4 A, and a channel dissipation of 125 W. The device is housed in a TO-3P package and exhibits low drive current requirements and no secondary breakdown, making it suitable for switching regulators.
The 2SK1835-E is a high-performance N-Channel MOSFET designed for high-speed power switching applications. It features a breakdown voltage of 1500 V, a continuous drain current of 4 A, and a channel dissipation of 125 W. The device is housed in a TO-3P package and exhibits low drive current requirements and no secondary breakdown, making it suitable for switching regulators.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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