2SC5200N(S1,E,S)
Tillverkare
TOSHIBA
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 230V 15A TO3P
TRANS NPN 230V 15A TO3P
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Genomgående hål TO-3P(N)
Bipolär (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Genomgående hål TO-3P(N)
Beskrivning (eng)
Beskrivning (eng)
The Toshiba 2SC5200N is a high-performance NPN bipolar transistor designed for power amplification applications. It features a maximum collector-emitter voltage (VCEO) of 230 V, a collector current rating of 15 A, and a power dissipation capability of 150 W. This transistor operates effectively at frequencies up to 30 MHz, making it suitable for high-fidelity audio frequency amplifier output stages.
The Toshiba 2SC5200N is a high-performance NPN bipolar transistor designed for power amplification applications. It features a maximum collector-emitter voltage (VCEO) of 230 V, a collector current rating of 15 A, and a power dissipation capability of 150 W. This transistor operates effectively at frequencies up to 30 MHz, making it suitable for high-fidelity audio frequency amplifier output stages.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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