2SC2712-GR(TE85L,F
Tillverkare
TOSHIBA
Datablad
Datablad
Detaljerad specifikation
Detaljerad specifikation
Trans GP BJT NPN 50V 0.15A 150mW Automotive AEC-Q101 3-Pin S-Mini T/R
Trans GP BJT NPN 50V 0.15A 150mW Automotive AEC-Q101 3-Pin S-Mini T/R
Beskrivning (eng)
Beskrivning (eng)
The 2SC2712-GR(TE85L,F) from Toshiba is a high-performance NPN bipolar junction transistor (BJT) designed for automotive applications. It features a maximum collector-emitter voltage (Vce) of 50V and a collector current (Ic) rating of 0.15A, with a power dissipation capability of 150mW. This transistor is compliant with AEC-Q101 standards, ensuring reliability in automotive environments. Packaged in a compact 3-pin S-Mini configuration, it is suitable for space-constrained designs while providing robust performance in switching and amplification tasks.
The 2SC2712-GR(TE85L,F) from Toshiba is a high-performance NPN bipolar junction transistor (BJT) designed for automotive applications. It features a maximum collector-emitter voltage (Vce) of 50V and a collector current (Ic) rating of 0.15A, with a power dissipation capability of 150mW. This transistor is compliant with AEC-Q101 standards, ensuring reliability in automotive environments. Packaged in a compact 3-pin S-Mini configuration, it is suitable for space-constrained designs while providing robust performance in switching and amplification tasks.
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Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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