2SA2016-TD-E
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 50V 7A PCP
TRANS PNP 50V 7A PCP
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 50 V 7 A 330MHz 3.5 W ytmonterad PCP
Bipolär (BJT) Transistor PNP 50 V 7 A 330MHz 3.5 W ytmonterad PCP
Beskrivning (eng)
Beskrivning (eng)
The 2SA2016-TD-E from onsemi is a high-performance PNP bipolar junction transistor (BJT) designed for various applications requiring efficient switching and amplification. With a maximum collector-emitter voltage of 50V and a collector current rating of 7A, this transistor operates effectively at frequencies up to 330MHz. It has a power dissipation capability of 3.5W, making it suitable for power management tasks. The surface mount configuration allows for compact designs, enhancing thermal performance and reliability in electronic circuits.
The 2SA2016-TD-E from onsemi is a high-performance PNP bipolar junction transistor (BJT) designed for various applications requiring efficient switching and amplification. With a maximum collector-emitter voltage of 50V and a collector current rating of 7A, this transistor operates effectively at frequencies up to 330MHz. It has a power dissipation capability of 3.5W, making it suitable for power management tasks. The surface mount configuration allows for compact designs, enhancing thermal performance and reliability in electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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