2SA2013-TD-E
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 50V 4A PCP
TRANS PNP 50V 4A PCP
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 50 V 4 A 400MHz 3.5 W ytmonterad PCP
Bipolär (BJT) Transistor PNP 50 V 4 A 400MHz 3.5 W ytmonterad PCP
Beskrivning (eng)
Beskrivning (eng)
The 2SA2013-TD-E from onsemi is a high-performance PNP bipolar junction transistor (BJT) designed for various applications requiring efficient switching and amplification. With a maximum collector-emitter voltage of 50V and a continuous collector current rating of 4A, this transistor operates effectively at frequencies up to 400MHz. It is housed in a surface mount package, ensuring compact design and ease of integration into modern electronic circuits. The device can handle a power dissipation of 3.5W, making it suitable for power management applications.
The 2SA2013-TD-E from onsemi is a high-performance PNP bipolar junction transistor (BJT) designed for various applications requiring efficient switching and amplification. With a maximum collector-emitter voltage of 50V and a continuous collector current rating of 4A, this transistor operates effectively at frequencies up to 400MHz. It is housed in a surface mount package, ensuring compact design and ease of integration into modern electronic circuits. The device can handle a power dissipation of 3.5W, making it suitable for power management applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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