2SA1943-O(S1,F,S)
Tillverkare
TOSHIBA
Datablad
Datablad
Detaljerad specifikation
Detaljerad specifikation
Trans GP BJT PNP 230V 15A 150000mW 3-Pin(3+Tab) TO-3PL Magasin
Trans GP BJT PNP 230V 15A 150000mW 3-Pin(3+Tab) TO-3PL Magasin
Beskrivning (eng)
Beskrivning (eng)
The Toshiba 2SA1943-O(S1,F,S) is a high-performance PNP bipolar junction transistor (BJT) designed for power amplification applications. It features a maximum collector-emitter voltage (Vce) of 230V and a continuous collector current (Ic) rating of 15A, making it suitable for high-power applications. With a power dissipation capability of 150000mW, this transistor is housed in a 3-pin TO-3PL package, which includes a tab for enhanced thermal management. Its robust design ensures reliability in demanding environments.
The Toshiba 2SA1943-O(S1,F,S) is a high-performance PNP bipolar junction transistor (BJT) designed for power amplification applications. It features a maximum collector-emitter voltage (Vce) of 230V and a continuous collector current (Ic) rating of 15A, making it suitable for high-power applications. With a power dissipation capability of 150000mW, this transistor is housed in a 3-pin TO-3PL package, which includes a tab for enhanced thermal management. Its robust design ensures reliability in demanding environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Bengt eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K