2SA1552S-TL-E
Tillverkare
SANYO
Datablad
Datablad
Specifikation
Specifikation
PNP EPITAXIAL PLANAR SILICON TRA
PNP EPITAXIAL PLANAR SILICON TRA
Detaljerad specifikation
Detaljerad specifikation
Bipolar (BJT) Transistor PNP 160 V 1.5 A 120MHz 1 W ytmonterad TP-FA
Bipolar (BJT) Transistor PNP 160 V 1.5 A 120MHz 1 W ytmonterad TP-FA
Beskrivning (eng)
Beskrivning (eng)
The 2SA1552S-TL-E is a PNP epitaxial planar silicon transistor designed for high-frequency applications. This bipolar junction transistor (BJT) operates with a maximum collector-emitter voltage of 160 V and a collector current of 1.5 A, making it suitable for various power amplification tasks. With a transition frequency of 120 MHz and a power dissipation capability of 1 W, this surface-mounted device is ideal for compact circuit designs. Its TP-FA package ensures efficient thermal management and space-saving integration in electronic systems.
The 2SA1552S-TL-E is a PNP epitaxial planar silicon transistor designed for high-frequency applications. This bipolar junction transistor (BJT) operates with a maximum collector-emitter voltage of 160 V and a collector current of 1.5 A, making it suitable for various power amplification tasks. With a transition frequency of 120 MHz and a power dissipation capability of 1 W, this surface-mounted device is ideal for compact circuit designs. Its TP-FA package ensures efficient thermal management and space-saving integration in electronic systems.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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