2SA1417T-TD-E
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 100V 2A PCP
TRANS PNP 100V 2A PCP
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 100 V 2 A 120MHz 500 mW Ytmonterad PCP
Bipolär (BJT) Transistor PNP 100 V 2 A 120MHz 500 mW Ytmonterad PCP
Beskrivning (eng)
Beskrivning (eng)
The 2SA1417T-TD-E is a PNP bipolar junction transistor (BJT) designed for high-performance applications. It features a maximum collector-emitter voltage of 100V and a continuous collector current rating of 2A, making it suitable for various switching and amplification tasks. With a transition frequency of 120MHz and a power dissipation capability of 500mW, this surface-mounted component is ideal for compact circuit designs. Its efficient thermal management and reliable performance make it a preferred choice in consumer electronics and industrial applications.
The 2SA1417T-TD-E is a PNP bipolar junction transistor (BJT) designed for high-performance applications. It features a maximum collector-emitter voltage of 100V and a continuous collector current rating of 2A, making it suitable for various switching and amplification tasks. With a transition frequency of 120MHz and a power dissipation capability of 500mW, this surface-mounted component is ideal for compact circuit designs. Its efficient thermal management and reliable performance make it a preferred choice in consumer electronics and industrial applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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