2SA1417S-TD-E
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 100V 2A PCP
TRANS PNP 100V 2A PCP
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 100 V 2 A 120MHz 500 mW Ytmonterad PCP
Bipolär (BJT) Transistor PNP 100 V 2 A 120MHz 500 mW Ytmonterad PCP
Beskrivning (eng)
Beskrivning (eng)
The 2SA1417S-TD-E is a PNP bipolar junction transistor (BJT) designed for high-performance applications. It features a maximum collector-emitter voltage of 100V and a continuous collector current rating of 2A, making it suitable for various power amplification tasks. With a transition frequency of 120MHz and a power dissipation capability of 500mW, this surface-mounted component is ideal for compact circuit designs. Its efficient thermal management and reliable switching characteristics enhance performance in demanding environments.
The 2SA1417S-TD-E is a PNP bipolar junction transistor (BJT) designed for high-performance applications. It features a maximum collector-emitter voltage of 100V and a continuous collector current rating of 2A, making it suitable for various power amplification tasks. With a transition frequency of 120MHz and a power dissipation capability of 500mW, this surface-mounted component is ideal for compact circuit designs. Its efficient thermal management and reliable switching characteristics enhance performance in demanding environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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