2SA1416S-TD-E
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 100V 1A PCP
TRANS PNP 100V 1A PCP
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 100 V 1 A 120 MHz 500 mW ytmonterad PCP
Bipolär (BJT) Transistor PNP 100 V 1 A 120 MHz 500 mW ytmonterad PCP
Beskrivning (eng)
Beskrivning (eng)
The 2SA1416S-TD-E is a PNP bipolar transistor designed for high-performance applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 1 A, and a gain-bandwidth product of 120 MHz. This surface-mounted device is optimized for low VCE(sat) and fast switching speeds, making it suitable for compact hybrid IC designs.
The 2SA1416S-TD-E is a PNP bipolar transistor designed for high-performance applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 1 A, and a gain-bandwidth product of 120 MHz. This surface-mounted device is optimized for low VCE(sat) and fast switching speeds, making it suitable for compact hybrid IC designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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