2SA1201-Y(TE12L,ZC
Tillverkare
TOSHIBA
Datablad
Datablad
Specifikation
Specifikation
PB-F POWER TRANSISTOR PW-MINI PD
PB-F POWER TRANSISTOR PW-MINI PD
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 120 V 800 mA 120MHz 500 mW ytmonterad PW-MINI
Bipolär (BJT) Transistor PNP 120 V 800 mA 120MHz 500 mW ytmonterad PW-MINI
Beskrivning (eng)
Beskrivning (eng)
The 2SA1201-Y is a PNP bipolar junction transistor designed for high voltage applications. It features a maximum collector-emitter voltage (VCEO) of -120 V, a collector current (IC) rating of -800 mA, and a transition frequency (fT) of 120 MHz. This surface-mounted device is suitable for power amplifier and voltage amplifier applications, with a power dissipation of 500 mW in a compact PW-MINI package.
The 2SA1201-Y is a PNP bipolar junction transistor designed for high voltage applications. It features a maximum collector-emitter voltage (VCEO) of -120 V, a collector current (IC) rating of -800 mA, and a transition frequency (fT) of 120 MHz. This surface-mounted device is suitable for power amplifier and voltage amplifier applications, with a power dissipation of 500 mW in a compact PW-MINI package.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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