2PD601ARL,215
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 50V 0.1A TO236AB
TRANS NPN 50V 0.1A TO236AB
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 50 V 100 mA 100 MHz 250 mW ytmonterad TO-236AB
Bipolär (BJT) Transistor NPN 50 V 100 mA 100 MHz 250 mW ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The Nexperia 2PD601ARL is a general-purpose NPN bipolar transistor housed in a TO-236AB (SOT23) surface-mounted package. It operates at a collector-emitter voltage (VCEO) of 50 V and a collector current (IC) of 100 mA, with a maximum power dissipation of 250 mW. The device features two current gain selections (hFE) ranging from 210 to 460, making it suitable for various switching and amplification applications up to 100 MHz.
The Nexperia 2PD601ARL is a general-purpose NPN bipolar transistor housed in a TO-236AB (SOT23) surface-mounted package. It operates at a collector-emitter voltage (VCEO) of 50 V and a collector current (IC) of 100 mA, with a maximum power dissipation of 250 mW. The device features two current gain selections (hFE) ranging from 210 to 460, making it suitable for various switching and amplification applications up to 100 MHz.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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