2PB710ARL,215
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 50V 0.5A TO236AB
TRANS PNP 50V 0.5A TO236AB
Detaljerad specifikation
Detaljerad specifikation
Bipolar (BJT) Transistor PNP 50 V 500 mA 120 MHz 250 mW ytmonterad TO-236AB
Bipolar (BJT) Transistor PNP 50 V 500 mA 120 MHz 250 mW ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The Nexperia 2PB710ARL is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It operates at a collector-emitter voltage (VCEO) of 50 V and a collector current (IC) of 500 mA, with a DC current gain (hFE) ranging from 120 to 240. This surface-mounted device (SMD) is housed in a compact TO-236AB package, making it suitable for space-constrained designs.
The Nexperia 2PB710ARL is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It operates at a collector-emitter voltage (VCEO) of 50 V and a collector current (IC) of 500 mA, with a DC current gain (hFE) ranging from 120 to 240. This surface-mounted device (SMD) is housed in a compact TO-236AB package, making it suitable for space-constrained designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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