2N7002WT1G
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 310MA SC70-3
MOSFET N-CH 60V 310MA SC70-3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 310mA (Ta) 280mW (Tj) ytmonterad SC-70-3 (SOT323)
N-Kanal 60 V 310mA (Ta) 280mW (Tj) ytmonterad SC-70-3 (SOT323)
Beskrivning (eng)
Beskrivning (eng)
The 2N7002WT1G is an N-Channel MOSFET designed for low-side load switching and level shifting applications. It features a maximum drain-to-source voltage of 60 V, a continuous drain current of 310 mA, and a power dissipation of 280 mW. The device is housed in a compact SC-70-3 package, ensuring a small footprint for space-constrained applications.
The 2N7002WT1G is an N-Channel MOSFET designed for low-side load switching and level shifting applications. It features a maximum drain-to-source voltage of 60 V, a continuous drain current of 310 mA, and a power dissipation of 280 mW. The device is housed in a compact SC-70-3 package, ensuring a small footprint for space-constrained applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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