2N7002-T1-E3
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 115MA TO236
MOSFET N-CH 60V 115MA TO236
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 115mA (Ta) 200mW (Ta) ytmonterad TO-236
N-Kanal 60 V 115mA (Ta) 200mW (Ta) ytmonterad TO-236
Beskrivning (eng)
Beskrivning (eng)
The 2N7002-T1-E3 is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 60V and a continuous Drain Current (ID) of 115mA. It features a low on-state resistance (RDS(on)) of 2.5Ω and a gate threshold voltage (VGS(th)) ranging from 1V to 2.5V. This surface-mounted device is suitable for high-speed switching applications and can be easily driven without a buffer.
The 2N7002-T1-E3 is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 60V and a continuous Drain Current (ID) of 115mA. It features a low on-state resistance (RDS(on)) of 2.5Ω and a gate threshold voltage (VGS(th)) ranging from 1V to 2.5V. This surface-mounted device is suitable for high-speed switching applications and can be easily driven without a buffer.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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