2N7002PV,115
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
MOSFET 2N-CH 60V 0.35A SOT666
MOSFET 2N-CH 60V 0.35A SOT666
Detaljerad specifikation
Detaljerad specifikation
Mosfet Array 60V 350mA 330mW ytmonterad SOT-666
Mosfet Array 60V 350mA 330mW ytmonterad SOT-666
Beskrivning (eng)
Beskrivning (eng)
The 2N7002PV is a dual N-channel Trench MOSFET with a maximum drain-source voltage of 60V and a continuous drain current of 350mA. It features low on-state resistance (RDS(on)) of 1.6Ω at VGS = 10V, making it suitable for high-speed switching applications. Packaged in a compact SOT666 surface mount configuration, it is ideal for relay drivers and low-side load switches.
The 2N7002PV is a dual N-channel Trench MOSFET with a maximum drain-source voltage of 60V and a continuous drain current of 350mA. It features low on-state resistance (RDS(on)) of 1.6Ω at VGS = 10V, making it suitable for high-speed switching applications. Packaged in a compact SOT666 surface mount configuration, it is ideal for relay drivers and low-side load switches.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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