2N7002P,215
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 360MA TO236AB
MOSFET N-CH 60V 360MA TO236AB
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 360mA (Ta) 350mW (Ta) ytmonterad TO-236AB
N-Kanal 60 V 360mA (Ta) 350mW (Ta) ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The 2N7002P,215 is a N-channel Trench MOSFET with a maximum drain-source voltage of 60 V and a continuous drain current of 360 mA. It features low on-state resistance (RDS(on)) of 1.6 Ω at VGS = 10 V and is housed in a compact TO-236AB surface-mounted package, making it suitable for high-speed switching applications.
The 2N7002P,215 is a N-channel Trench MOSFET with a maximum drain-source voltage of 60 V and a continuous drain current of 360 mA. It features low on-state resistance (RDS(on)) of 1.6 Ω at VGS = 10 V and is housed in a compact TO-236AB surface-mounted package, making it suitable for high-speed switching applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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