2N7002K-T1-GE3
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 300MA TO236
MOSFET N-CH 60V 300MA TO236
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 300mA (Ta) 350mW (Ta) ytmonterad SOT-23-3 (TO-236)
N-Kanal 60 V 300mA (Ta) 350mW (Ta) ytmonterad SOT-23-3 (TO-236)
Beskrivning (eng)
Beskrivning (eng)
The 2N7002K-T1-GE3 is an N-Channel MOSFET with a maximum drain-source voltage of 60 V and a continuous drain current of 300 mA. It features a low on-state resistance (RDS(on)) of 2 Ω, a low threshold voltage of 2 V (typ.), and a fast switching speed of 25 ns. This surface-mounted device is ideal for high-speed applications and direct logic-level interfacing.
The 2N7002K-T1-GE3 is an N-Channel MOSFET with a maximum drain-source voltage of 60 V and a continuous drain current of 300 mA. It features a low on-state resistance (RDS(on)) of 2 Ω, a low threshold voltage of 2 V (typ.), and a fast switching speed of 25 ns. This surface-mounted device is ideal for high-speed applications and direct logic-level interfacing.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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