2N7002HSX
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
MOSFET 2N-CH 60V 0.32A 6TSSOP
MOSFET 2N-CH 60V 0.32A 6TSSOP
Detaljerad specifikation
Detaljerad specifikation
Mosfet Array 60V 320mA (Ta) 420mW ytmonterad 6-TSSOP
Mosfet Array 60V 320mA (Ta) 420mW ytmonterad 6-TSSOP
Beskrivning (eng)
Beskrivning (eng)
The 2N7002HSX is a dual N-channel Trench MOSFET with a maximum drain-source voltage of 60V and a continuous drain current of 320mA. It features low on-state resistance (RDS(on)) of 1.6Ω at VGS = 10V and is housed in a compact 6-TSSOP package, making it suitable for space-constrained applications.
The 2N7002HSX is a dual N-channel Trench MOSFET with a maximum drain-source voltage of 60V and a continuous drain current of 320mA. It features low on-state resistance (RDS(on)) of 1.6Ω at VGS = 10V and is housed in a compact 6-TSSOP package, making it suitable for space-constrained applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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